Lowest Rdson 25-V and 30-V devices in 5 mm by 6 mm QFN package

DALLAS, Jan. 19, 2015 — (PRNewswire) —  Texas Instruments (TI) (NASDAQ: TXN) today introduced 11 new N-channel power MOSFETs to its NexFET™ product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry's lowest on-resistance (Rdson) in a QFN package. In addition, TI's new 12-V FemtoFET™ CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package. For more information, samples or a reference design, visit www.ti.com/csd16570q5b-pr.

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson. Read a blog, " Power MOSFET safe operating area (SOA) curves for designing with hot-swap and ORing FET controllers."  Download a 12-V, 60-A hot swap reference design featuring TI's CSD17570Q5B NexFET.

TI's new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720. Download the application note " Robust Hot Swap Designs" to understand how a transistor is selected as a pass element and how to ensure safe operation under all possible conditions.

New NexFET products and key features

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