TOKYO — (BUSINESS WIRE) — February 24, 2021 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “ MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20210224006218/en/
Toshiba: MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module for industrial applications including railways vehicle and renewable energy power generation systems. (Graphic: Business Wire)
To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility. The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Applications
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Industrial motor control equipment
Features
- Drain-source voltage rating : VDSS=3300V
- Drain current rating : ID=800A Dual
- High channel temperature range : Tch=175°C
-
Low loss :
Eon=250mJ (typ.)
Eoff=240mJ (typ.)
VDS(on)sense=1.6V (typ.) - Low stray inductance : Ls=12nH (typ.)
- High power density small iXPLV package
Main Specifications
(unless otherwise specified, @Tc=25°C) |
|||
Part number |
|||
Package |
iXPLV |
||
Absolute maximum ratings |
Drain-source voltage VDSS (V) |
3300 |
|
Gate-source voltage VGSS (V) |
+25/-10 |
||
Drain current (DC) ID (A) |
800 |
||
Drain current (pulsed) IDP (A) |
1600 |
||
Channel temperature Tch (°C) |
175 |
||
Isolation voltage Visol (Vrms) |
6000 |
||
Electrical characteristics |
Drain-source voltage on-voltage (sense) VDS(on)sense typ. (V) |
@VGS= +20V, ID=800A |
1.6 |
Source-drain voltage on-voltage (sense) VSD(on)sense typ. (V) |
@VGS= +20V, IS=800A |
1.5 |
|
Source-drain voltage off-voltage (sense) VSD(off)sense typ. (V) |
@VGS= －6V, IS=800A |
2.3 |
|
Stray inductance module LSPN typ. (nH) |
12 |
||
Turn-on switching loss Eon typ. (mJ) |
@VDD=1800V, ID=800A, Tch=150°C |
250 |
|
Turn-off switching loss Eoff typ. (mJ) |
@VDD=1800V, ID=800A, Tch=150°C |
240 |
|
Follow the link below for more on the new product.
MG800FXF2YMS3
https://toshiba.semicon-storage.com/info/lookup.jsp?pid=MG800FXF2YMS3
Follow the link below for more on Toshiba’s SiC power device lineup.
SiC Power Devices
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/sic-power-devices.html
Customer Inquiries
Small Signal Device Sales & Marketing Dept.
Tel: +81-3-3457-3411
https://toshiba.semicon-storage.com/ap-en/contact.html
*Company names, product names, and service names may be trademarks of their respective companies.
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, the company has taken its place among the leading general devices companies, and offers its customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.
