M31 Develops SRAM Compiler IP on TSMC’s 28nm Embedded Flash Process Technology Providing High Performance and Low Power Solutions
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M31 Develops SRAM Compiler IP on TSMC’s 28nm Embedded Flash Process Technology Providing High Performance and Low Power Solutions

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M31's SRAM Compiler IP solutions on TSMC's 28nm Embedded Flash process technology will enhance SoC designs on power and performance for mobile, power management, IoT, and automotive electronics applications.

Hsinchu, Taiwan -April 17, 2019 - M31 Technology Corporation (Taiwan stock code: 6643), a global silicon Intellectual Property (IP) boutique, today announces that it will develop SRAM Compiler IP on TSMC's 28nm Embedded Flash process technology. These IP solutions will help designers to improve their SoC designs on power and performance for mobile, power management, IoT, and automotive electronics applications. These IP solutions are expected to be available to customers for design integration in the third quarter of this year.

"As network bandwidth continues to increase, so does the demand for data computing and storage,” said H.P. Lin, Chairman of M31 Technology. “M31’s IP developed on TSMC’s industry-leading 28nm Embedded Flash process technology helps IC designers shortens SoC design cycle while reducing SoC power consumption and improving performance. It can be used in high-speed data processing, power management, Internet of Things, automotive electronics and mobile applications.” 

“Embedded Flash technology becomes critical to support a wide range of applications including smart mobile, automotive electronics and the Internet of Things,” said Suk Lee, senior director, Design Infrastructure Management Division at TSMC. “The collaborative effort combining M31’s IP solutions with TSMC's 28nm Embedded Flash process technology helps designers to optimize SoCs and achieve a successful balance between speed, area and power consumption."

The SRAM Compiler IP developed on TSMC’s 28nm Embedded Flash process technology is fully featured, supporting multiple power saving modes. Based on the design requirements, designers can choose the optimized power-saving mode, extending the battery life of the mobile device and providing customers with more diversified product applications. With the excellent technical characteristics of this memory design, these IP can be fully integrated into the embedded flash memory system platform, and are expected to be adopted by well-known international manufacturers in the third quarter of this year.

In the future, M31 will continue its IP development and validation for different advanced process technologies to provide distinctive IP solutions to the worldwide chip design community.