Heat dissipation reduced by 40% compared to Toshiba existing products

TOKYO — (BUSINESS WIRE) — September 26, 2016 — Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of N-channel MOSFETs for load switches in mobile devices, including smartphones and tablets, that secure the industry’s leading-class^[1] low on-resistance. Shipments of the new products start from today.

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Toshiba: Low On-resistance N-Channel MOSFETs for Load Switches in Mobile Devices (Photo: Business Wire)

The new product line-up consists of the 30V “SSM6K513NU” and the 40V “SSM6K514NU”. By utilizing Toshiba’s latest “U-MOS IX-H series” trench process, the new MOSFETs achieve the industry’s leading-class low on-resistance: 6.5mOhm for “SSM6K513NU” and 8.9mOhm for SSM6K514NU”. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% against Toshiba existing products. ^[2]

The MOSFETs are suitable for use in electric power switching applications of over 10W, including small-size mobile devices that meet the USB Type-C^TM and USB Power Delivery (PD) standards, and contribute to high system efficiency and low power consumption.