August 27, 2020 -- Weebit Nano (ASX: WBT), a leading developer of next-generation memory technology for the global semiconductor industry, and its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, filed a new patent to further protect the intellectual property of its silicon oxide (SiOx) ReRAM technology.

The new patent defines an efficient method to implement robust multi-level storage in ReRAM. Multi-level is the ability to store more than one bit per cell, thus increasing the memory storage capacity without increasing the number of memory cells or the memory array size, making the memory much more cost-efficient.

This patent uses the variability characteristics of ReRAM memory cells to increase the number of resistance levels that can be tuned by the ReRAM. While this method is based on Weebit Nano’s SiOx-based ReRAM, importantly, it can also be extended to any ReRAM technology.

Coby Hanoch, CEO of Weebit Nano, said: “Our close collaboration with our partners at Leti has allowed us to develop a method that is an important step in creating a multi-level cell which can significantly improve our cost-competitiveness. In parallel to the ongoing productisation activity we are continuing to improve the technology to make it even more attractive to customers.”