EL SEGUNDO, Calif. – Dec. 17, 2018
Meteksan Defence in Turkey designed a power amplifier (PA) matching network for the Cree gallium nitride (GaN) high-electron mobility transistor (HEMT) CGH-40025F using the NI AWR Design Environment platform, which provided the highly accurate load-pull analysis required to achieve the network’s goals of high power and efficiency, as well as unconditional stability.
“We chose NI AWR software because of its powerful load-pull capabilities,” said Doğancan Eser, designer at Meteksan Defence. “In addition, it was beneficial to use the harmonic balance engine at the beginning of the design to obtain the output power and power-added efficiency (PAE) information for the transistor impedance at the load port.”
Where: The Meteksan Defence Designs Matching Network for GaN HEMT Power Amplifier success story can be viewed at awrcorp.com/customer-stories/meteksan-defence.
When: Immediately.
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