- π-MOS IX series of 600V planar MOSFET combines high efficiency and low noise -
TOKYO — (BUSINESS WIRE) — January 9, 2018 — Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.
This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20180109006889/en/
Toshiba Electronic Devices & Storage Corporation: a new series of 600V planar MOSFET "π-MOS IX" (Photo: Business Wire)
With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.
Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.
Applications
- Small to medium switching power supplies for notebook PC AC adapters and game console chargers
- Lighting power supplies
Features
- Combines high efficiency and low noise
- Rated avalanche current equivalent to the rated DC current
Main Specifications |
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Part Number | Package |
Absolute Maximum
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RDS(ON)
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Qg
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Ciss
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Current generation
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VDSS (V) | ID (A) | |||||||||||||
TK650A60F | TO-220SIS | 600 | 11 | 0.65 | 34 | 1320 | TK11A60D | |||||||
TK750A60F | TO-220SIS | 600 | 10 | 0.75 | 30 | 1130 | TK10A60D | |||||||
TK1K2A60F | TO-220SIS | 600 | 6 | 1.2 | 20.5 | 740 |
TK6A60D (1.25Ω) |
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TK1K9A60F | TO-220SIS | 600 | 3.7 | 1.9 | 14 | 490 |
TK4A60DB (2.0Ω) |
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