Device combines high efficiency, gain and RF output power, complemented by Freescale’s volume production capabilities
PHOENIX — (BUSINESS WIRE) — May 19, 2015 — Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new A2G22S160-01S delivers exceptional performance in 30 W and 40 W amplifiers for wireless infrastructure applications, and represents the first of what is planned to become a broad portfolio of Airfast family GaN transistors for the cellular market.
As the market leader in RF power transistors, Freescale’s addition of GaN RF solutions provides its customers an expanded portfolio of world-class products for wireless infrastructure markets. The announcement comes only a few months following the company’s introduction of the MMRF5014H – Freescale’s first GaN RF power transistor for military and industrial applications, which continues to lead the industry in thermal and wideband RF performance for 100 W-class GaN transistors.
“Freescale is driving the transition of GaN from niche markets to mainstream applications like cellular infrastructure,” said Paul Hart, senior vice president and general manager of Freescale’s RF business. “The time is right to deliver GaN solutions to our extremely broad base of telecommunications customers. In addition to utilizing the A2G22S160-01S’ excellent performance, our cellular customers can look forward to leveraging Freescale’s high-volume production capability and worldwide customer support.”
GaN delivers higher power conversion efficiencies, faster switching speeds and greater power densities than silicon, enabling the creation of power transistors that are much smaller in size and that outperform traditional devices. This is made possible due to the wider band gap, higher critical electric field and very high electron mobility characteristics that GaN provides. While GaN migration has been cost prohibitive in the past, recent commercial and technological advances are driving manufacturing costs lower. A long-time leader in semiconductor manufacturing, Freescale is unleashing the advantages of GaN for some of the biggest markets in the world and enabling a large-scale rollout of GaN power amplifiers in mainstream commercial base station markets.
Freescale’s Airfast family of RF power products covers the entire range of wireless cellular spectrum from 600 MHz to 3.8 GHz, with multiple semiconductor technology options. The A2G22S160-01S offers state-of-the-art performance in the frequency range between 1800 MHz and 2200 MHz. For example, in a 40 W Doherty two-way asymmetrical amplifier employing one A2G22S160-01S in the carrier path and two in the peaking path, maximum output power is 56.2 dBm. With 8dB output back-off (OBO), gain is 15.4 dB and efficiency is 56.7 percent. Adjacent-channel power (ACP) is -55 dBc with digital predistortion (DPD) when driven by two 20 MHz LTE carriers with an aggregate 40 MHz carrier bandwidth.
Availability
The A2G22S160-01S GaN RF power transistor is now in production, with reference designs and other enablement solutions available. For pricing or additional information, please contact a local Freescale sales office.
About Freescale Semiconductor
Freescale Semiconductor (NYSE: FSL) enables secure, embedded processing solutions for the Internet of Tomorrow. Freescale’s solutions drive a more innovative and connected world, simplifying our lives and making us safer. While serving the world’s largest companies, Freescale is also committed to supporting science, technology, engineering and math (STEM) education, enabling the next generation of innovators. www.freescale.com.
About the Freescale Technology Forum
For ten years, the Freescale Technology Forum (FTF) has driven innovation and collaboration by featuring one of the most comprehensive embedded ecosystems in the industry. FTF provides the training and expertise customers need to create and enable the secure, embedded solutions needed for the Internet of Things—today and tomorrow. FTF features four days of in-depth training, hands-on workshops, demonstrations from Freescale and ecosystem partners and exceptional opportunities to collaborate with industry peers and visionaries. The forum has been enthusiastically received by the global developer community, drawing more than 67,500 attendees worldwide since its inception in 2005. FTF takes place June 22-25, 2015, in Austin, Texas.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © 2015 Freescale Semiconductor, Inc.
View source version on businesswire.com: http://www.businesswire.com/news/home/20150519005486/en/
Contact:
Freescale Semiconductor
Americas
Jack Taylor,
512-560-7143
Email Contact
or
Asia
Pacific
Gloria Shiu, (85-22) 666-8237
Email Contact
or
Europe,
Middle East and Africa
Laurent Massicot, (33-16) 935-7712
Email Contact
or
India
Anjali
Srivastava, (91-120) 395-0000
Email Contact
or
Japan
Kiyomi
Masuda, (81-3) 5437-9392
Email Contact
