Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz

LOWELL, Mass. — (BUSINESS WIRE) — August 25, 2014 — M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.

The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. This high performance transistor is assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. (Photo: Business Wire)

The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

“The new 15 W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” said Paul Beasly, Product Manager. “The device is an ideal driver stage for MACOM’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”

Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.

The table below outlines typical performance for the 1.2-1.4 GHz frequency band.