Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Conference (APEC®)

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs

EL SEGUNDO, Calif. — (BUSINESS WIRE) — February 27, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs, will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, hard-switched power converter design. The conference will be held in Fort Worth, Texas, from March 16th through the 20th.

The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals, addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/.

“We are honored that the technical review committee of APEC 2014 has selected EPC experts to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentations Featuring GaN FETs by EPC Experts:

Attendees interested in meeting with EPC applications experts during the event can send a request to info@epc-co.com.

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Visit our web site: www.epc-co.com
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Efficient Power Conversion
Joe Engle, 310-986-0350
Email Contact

Featured Video
Jobs
GIS Specialist for Washington State Department of Natural Resources at Olympia, Washington
Business Technology Analyst for Surface Water Management at Everett, Washington
Business Development Manager for Berntsen International, Inc. at Madison, Wisconsin
Equipment Engineer, Raxium for Google at Fremont, California
Mechanical Test Engineer, Platforms Infrastructure for Google at Mountain View, California
Senior Principal Mechanical Engineer for General Dynamics Mission Systems at Canonsburg, Pennsylvania
Upcoming Events
Dimensions User Conference 2024 at The Venetian Resort Las Vegas NV - Nov 11 - 13, 2024
URISA GIS Leadership Academy at Embassy Suites Fort Worth Downtown 600 Commerce Street Fort Worth, TX - Nov 18 - 22, 2024



© 2024 Internet Business Systems, Inc.
670 Aberdeen Way, Milpitas, CA 95035
+1 (408) 882-6554 — Contact Us, or visit our other sites:
AECCafe - Architectural Design and Engineering EDACafe - Electronic Design Automation TechJobsCafe - Technical Jobs and Resumes  MCADCafe - Mechanical Design and Engineering ShareCG - Share Computer Graphic (CG) Animation, 3D Art and 3D Models
  Privacy PolicyAdvertise