Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences
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Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences

BOISE, Idaho, July 29, 2021 (GLOBE NEWSWIRE) -- Micron Technology, Inc., (Nasdaq: MU) announced today it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Engineered for high-end and flagship phones, Micron’s discrete UFS 3.1 mobile NAND unlocks 5G’s potential with up to 75% faster sequential write and random read performance than prior generations,1 enabling downloads of two-hour 4K movies2 in as little as 9.6 seconds.

Micron’s 176-layer NAND offers a compact design ideal for the high capacity, small form factors required in mobile devices. This launch follows quickly on the heels of Micron’s volume delivery of PCIe Gen4 solid-state drives with 176-layer NAND in June, bringing high performance, design flexibility and low power consumption to professional workstations and ultrathin notebooks. Now available for smartphones, Micron’s industry-pioneering advanced NAND technology and performance enables a more responsive mobile experience with true multitasking across apps.

“5G delivers multigigabit speeds to mobile devices, and a high-performance hardware foundation is critical to powering these lightning-fast mobile experiences,” said Raj Talluri, senior vice president and general manager of Micron’s Mobile Business Unit. “Our breakthrough 176-layer NAND supercharges smartphones with unparalleled performance, delivering rich multimedia content to consumers’ fingertips in a flash.”

Micron’s 176-layer UFS 3.1 solution provides 15% faster mixed workload performance than its prior generation, enabling faster app launching and switching across multiple apps for a smoother mobile experience. Without storage as a bottleneck, users can take advantage of 5G’s speeds with the powerful combination of UFS 3.1 and Micron’s 176-layer NAND.

“Micron’s first-of-its-kind combination of UFS 3.1 and 176-layer NAND will give our HONOR Magic3 Series an edge as the first smartphone to debut with this high-performance 3D NAND solution,” said Fang Fei, president of product line at Honor Device Co., Ltd. “Users of our new flagship HONOR Magic3 Series will be able to enjoy snappy, seamless multitasking across apps, fast downloads and storage supported by Micron’s industry-leading solution.”

Micron’s 176-layer mobile solution features:

Availability of Micron’s 176-layer UFS 3.1 mobile solutions
Now available, Micron’s 176-layer UFS 3.1 discrete mobile NAND is offered in 128GB, 256GB and 512GB capacities.

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About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience. To learn more about Micron Technology, Inc. (Nasdaq: MU), visit micron.com.

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1
All comparisons with prior generations are against Micron’s previous-generation 96-layer UFS 3.1 storage device.
2 Assuming a 14GB file size per movie
3 Assuming a 1GB file size for the video
4 Comparison based on Micron’s previous-generation UFS 3.1 using floating-gate 96-layer NAND and the 176-layer product running with WriteBooster disabled.


Micron Media Relations Contact
Steffi Lau
Micron Technology, Inc.
+1 (408) 834-1618
steffilau@micron.com

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