Toshiba Launches 600V Super Junction MOSFET "DTMOS IV-H" High-Speed Switching Series

TOKYO — (BUSINESS WIRE) — March 30, 2014Toshiba Corporation (TOKYO: 6502) today announced the launch of a new series of high-speed switching type super junction MOSFETs. The new “DTMOS IV-H series” is based on Toshiba’s fourth generation 600V super junction MOSFET “DTMOS IV series”. Mass production of the three products in the new series will start from the end of March.

Toshiba : 600V Super Junction MOSFET "DTMOS IV-H" High-Speed Switching Series (Photo: Business Wire)

Toshiba : 600V Super Junction MOSFET "DTMOS IV-H" High-Speed Switching Series (Photo: Business Wire)

While keeping the low ON-resistance level of conventional “DTMOS IV” products, the new series achieves faster switching performance by reducing the parasitic capacitance between gate and drain by 45%. This can also contribute to improved power efficiency in products. Additional package options are scheduled for the future.

Key Features of the New Product

1. Gate pattern optimization, resulting in a 45 percent reduction in gate-drain charge compared to the “DTMOS IV series”.

2. Reduction of the increase of ON-resistance at high temperatures due to the use of the single epitaxial process.

3. Low ON-resistance lineup

Applications

1. High efficiency switching power supplies for servers and telecom base stations

2. Power conditioners for photovoltaic inverters

         

Main Specifications of the New Product

                     
Part Number Package Absolute Maximum Rating RDS(ON)

max (Ω)

at VGS=10V

Qg

Typ.

(nC)

C iss

Typ.

(pF)

V DSS (V)   I D (A)
TK31N60X TO-247 600 30.8 0.088 65 3000
TK39N60X TO-247 600 38.8 0.065 85 4100
TK62N60X   TO-247   600   61.8   0.040   135   6500
 

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